Blar i forfatter Artikler, rapporter og annet (fysikk og teknologi) "Almansouri, Ibraheem"

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    • Direct Measurement of the Magnitude of the van der Waals Interaction of Single and Multilayer Graphene 

      Chiou, Yu-Cheng; Olukan, Tuza Adeyemi; Almahri, Mariam Ali; Apostoleris, Harry; Chiu, Cheng Hsiang; Lai, Chia-Yun; Lu, Jin-You; Santos, Sergio; Almansouri, Ibraheem; Chiesa, Matteo (Journal article; Tidsskriftartikkel; Peer reviewed, 2018-09-23)
      Vertical stacking of monolayers via van der Waals (vdW) assembly is an emerging field that opens promising routes toward engineering physical properties of two-dimensional materials. Industrial exploitation of these engineering heterostructures as robust functional materials still requires bounding their measured properties so as to enhance theoretical tractability and assist in experimental designs. ...

    • Discerning the Contribution of Morphology and Chemistry in Wettability Studies 

      Sloyan, Karen; Lai, Chia-Yun; Lu, Jin-You; Alfakes, Boulos; Al Hassan, Saeed; Almansouri, Ibraheem; Dahlem, Marcus S; Chiesa, Matteo (Journal article; Tidsskriftartikkel; Peer reviewed, 2018-07-15)
      The wetting behavior of homogeneous systems is now well understood at the macroscopic scale. However, this understanding offers little predictive power regarding wettability when mesoscopic chemical and morphological heterogeneities come into play. The fundamental interest in the effect of heterogeneity on wettability is derived from its high technological relevance in several industries, including ...

    • Superposition of semiconductor and semi-metal properties of self-assembled 2D SnTiS3 heterostructures 

      Tamalampudi, Srinivasa Reddy; Lu, Jin-You; Rajput, Nitul; Alfakes, Boulos; Sankar, Raman; Apostoleris, Harry; Patole, Shashikant; Almansouri, Ibraheem; Chiesa, Matteo (Journal article; Tidsskriftartikkel; Peer reviewed, 2020-07-15)
      Two-dimensional metal dichalcogenide/monochalcogenide thin flakes have attracted much attention owing to their remarkable electronic and electrochemical properties; however, chemical instability limits their applications. Chemical vapor transport (CVT)- synthesized SnTiS<sub>3</sub> thin flakes exhibit misfit heterojunction structure and are highly stable in ambient conditions, offering a ...

    • Thickness-Dependent Resonant Raman and E' Photoluminescence Spectra of Indium Selenide and Indium Selenide/Graphene Heterostructures 

      Tamalampudi, Srinivasa Reddy; Sankar, Raman; Apostoleris, Harry; Almahri, Mariam Ali; Alfakes, Boulos; Al-Hagri, Abdulrahman; Li, Ru; Gougam, Adel; Almansouri, Ibraheem; Chiesa, Matteo; Lu, Jin-You (Journal article; Tidsskriftartikkel; Peer reviewed, 2019-05-28)
      Atomically thin, two-dimensional (2D) indium selenide (InSe) has attracted considerable attention because of the dependence of its bandgap on sample thickness, making it suitable for small-scale optoelectronic device applications. In this work, by the use of Raman spectroscopy with three different laser wavelengths, including 488, 532, and 633 nm, representing resonant, near-resonant, and conventional ...