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dc.contributor.authorTorstensen, Kristian
dc.contributor.authorGhosh, Abhik
dc.date.accessioned2024-02-09T11:16:42Z
dc.date.available2024-02-09T11:16:42Z
dc.date.issued2023-11-07
dc.description.abstractSince the discovery of decamethylsilicocene over three decades ago, chemists have successfully isolated a variety of divalent silicon compounds by orchestrating steric and electronic effects to their advantage. Two broad strategies of electronic stabilization appear to have been widely deployed, namely, π-conjugation as in diaminosilylenes and π-complexation as in decamethylsilicocene and silapyramidanes. Herein, we attempted to identify quantitative metrics for the electronic stabilization of silylenes. Singlet−triplet gaps and electron affinities, both physical observables, proved useful in this regard. Thus, the most stable silylenes exhibit unusually large singlet−triplet gaps and very low or negative gas-phase electron affinities. Both metrics signify low electrophilicity, i.e., a low susceptibility to nucleophilic attack. The chemical significance of the ionization potential associated with the Si-based lone pair, on the other hand, remains unclear.en_US
dc.identifier.citationTorstensen, Ghosh. From Diaminosilylenes to Silapyramidanes: Making Sense of the Stability of Divalent Silicon Compounds. ACS Organic & Inorganic Au. 2023en_US
dc.identifier.cristinIDFRIDAID 2216357
dc.identifier.doi10.1021/acsorginorgau.3c00041
dc.identifier.issn2694-247X
dc.identifier.urihttps://hdl.handle.net/10037/32891
dc.language.isoengen_US
dc.publisherAmerican Chemical Societyen_US
dc.relation.journalACS Organic & Inorganic Au
dc.rights.accessRightsopenAccessen_US
dc.rights.holderCopyright 2023 The Author(s)en_US
dc.rights.urihttps://creativecommons.org/licenses/by/4.0en_US
dc.rightsAttribution 4.0 International (CC BY 4.0)en_US
dc.titleFrom Diaminosilylenes to Silapyramidanes: Making Sense of the Stability of Divalent Silicon Compoundsen_US
dc.type.versionpublishedVersionen_US
dc.typeJournal articleen_US
dc.typeTidsskriftartikkelen_US
dc.typePeer revieweden_US


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Attribution 4.0 International (CC BY 4.0)
Med mindre det står noe annet, er denne innførselens lisens beskrevet som Attribution 4.0 International (CC BY 4.0)