dc.contributor.author | Torstensen, Kristian | |
dc.contributor.author | Ghosh, Abhik | |
dc.date.accessioned | 2024-02-09T11:16:42Z | |
dc.date.available | 2024-02-09T11:16:42Z | |
dc.date.issued | 2023-11-07 | |
dc.description.abstract | Since the discovery of decamethylsilicocene over three
decades ago, chemists have successfully isolated a variety of divalent silicon
compounds by orchestrating steric and electronic effects to their advantage.
Two broad strategies of electronic stabilization appear to have been widely
deployed, namely, π-conjugation as in diaminosilylenes and π-complexation
as in decamethylsilicocene and silapyramidanes. Herein, we attempted to
identify quantitative metrics for the electronic stabilization of silylenes.
Singlet−triplet gaps and electron affinities, both physical observables, proved
useful in this regard. Thus, the most stable silylenes exhibit unusually large
singlet−triplet gaps and very low or negative gas-phase electron affinities.
Both metrics signify low electrophilicity, i.e., a low susceptibility to nucleophilic attack. The chemical significance of the ionization
potential associated with the Si-based lone pair, on the other hand, remains unclear. | en_US |
dc.identifier.citation | Torstensen, Ghosh. From Diaminosilylenes to Silapyramidanes: Making Sense of the Stability of Divalent Silicon Compounds. ACS Organic & Inorganic Au. 2023 | en_US |
dc.identifier.cristinID | FRIDAID 2216357 | |
dc.identifier.doi | 10.1021/acsorginorgau.3c00041 | |
dc.identifier.issn | 2694-247X | |
dc.identifier.uri | https://hdl.handle.net/10037/32891 | |
dc.language.iso | eng | en_US |
dc.publisher | American Chemical Society | en_US |
dc.relation.journal | ACS Organic & Inorganic Au | |
dc.rights.accessRights | openAccess | en_US |
dc.rights.holder | Copyright 2023 The Author(s) | en_US |
dc.rights.uri | https://creativecommons.org/licenses/by/4.0 | en_US |
dc.rights | Attribution 4.0 International (CC BY 4.0) | en_US |
dc.title | From Diaminosilylenes to Silapyramidanes: Making Sense of the Stability of Divalent Silicon Compounds | en_US |
dc.type.version | publishedVersion | en_US |
dc.type | Journal article | en_US |
dc.type | Tidsskriftartikkel | en_US |
dc.type | Peer reviewed | en_US |