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dc.contributor.authorChiou, Yu-Cheng
dc.contributor.authorOlukan, Tuza Adeyemi
dc.contributor.authorAlmahri, Mariam Ali
dc.contributor.authorApostoleris, Harry
dc.contributor.authorChiu, Cheng Hsiang
dc.contributor.authorLai, Chia-Yun
dc.contributor.authorLu, Jin-You
dc.contributor.authorSantos, Sergio
dc.contributor.authorAlmansouri, Ibraheem
dc.contributor.authorChiesa, Matteo
dc.date.accessioned2019-05-02T21:35:39Z
dc.date.available2019-05-02T21:35:39Z
dc.date.issued2018-09-23
dc.description.abstractVertical stacking of monolayers via van der Waals (vdW) assembly is an emerging field that opens promising routes toward engineering physical properties of two-dimensional materials. Industrial exploitation of these engineering heterostructures as robust functional materials still requires bounding their measured properties so as to enhance theoretical tractability and assist in experimental designs. Specifically, the short-range attractive vdW forces are responsible for the adhesion of chemically inert components and are recognized to play a dominant role in the functionality of these structures. Here, we reliably quantify the strength of ambient vdW forces in terms of an effective Hamaker coefficient for chemical vapor deposition-grown graphene and show how it scales by a factor of two or three from single to multiple layers on standard supporting surfaces such as copper or silicon oxide. Furthermore, direct measurements on freestanding graphene provide the means to discern the interplay between the vdW potential of graphene and its supporting substrate. Our results demonstrated that the underlying substrates could be controllably exploited to enhance or reduce the vdW force of graphene surfaces. We interpret the physical phenomena in terms of a Lifshitz theory-based analytical model.en_US
dc.descriptionSource at <a href=https://doi.org/10.1021/acs.langmuir.8b02802>https://doi.org/10.1021/acs.langmuir.8b02802</a>.en_US
dc.identifier.citationChiou, Y.C., Olukan, T., Almahri, M.A., Apostoleris, H., Chiu, C.H., Lai, C.Y., ... Chiesa, M. (2018). Direct Measurement of the Magnitude of the van der Waals Interaction of Single and Multilayer Graphene. <i>Langmuir, 34</i>(41), 12335-12343. https://doi.org/10.1021/acs.langmuir.8b02802en_US
dc.identifier.cristinIDFRIDAID 1630522
dc.identifier.doi10.1021/acs.langmuir.8b02802
dc.identifier.issn0743-7463
dc.identifier.issn1520-5827
dc.identifier.urihttps://hdl.handle.net/10037/15247
dc.language.isoengen_US
dc.publisherAmerican Chemical Societyen_US
dc.relation.journalLangmuir
dc.rights.accessRightsopenAccessen_US
dc.subjectVDP::Technology: 500::Nanotechnology: 630en_US
dc.subjectVDP::Teknologi: 500::Nanoteknologi: 630en_US
dc.subjectVDP::Mathematics and natural science: 400::Physics: 430::Atomic physics, molecular physics: 433en_US
dc.subjectVDP::Matematikk og Naturvitenskap: 400::Fysikk: 430::Atomfysikk, molekylfysikk: 433en_US
dc.titleDirect Measurement of the Magnitude of the van der Waals Interaction of Single and Multilayer Grapheneen_US
dc.typeJournal articleen_US
dc.typeTidsskriftartikkelen_US
dc.typePeer revieweden_US


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