Study & Analysis of Power Switches with reverse voltage blocking capability

Abstract

This thesis hovers over the basic introduction to Silicon Carbide (Metal Oxide Semiconductors Field-effect Transistor) MOSFET switches and the circuit designing of Current Source Invertors using SiC MOSFET switches. The thesis covers the basic grounds for all the steps needed in the implementation of hardware design for half bridge, full bridge and three phase CSIs in the future. Firstly, a detailed literature review is presented to give a deep knowledge about the importance and advantages of using SiC switches and CSIs. Furthermore, a comparison is taken between half bridge and full bridge voltage source converters alongside half and full bridge CSIs using (Physical security information management) PSIM software to model the circuits and analyze different aspects with respect to efficiency of both type of converters. The converters are compared with respect to different input voltages, frequency, and power. Afterwards, a fully working three phase Current Source Inverter is designed using Simulink platform and tested on different frequencies and the results are shown with the outputs of current and voltage waveforms. In the next step Simulations for the PCBs of half bridge, full bridge and three phase CSIs are simulated using LTspice software and examined with the desired output and then are designed in Easy EDA software ready to be printed. Lastly, an additional objective is achieved by testing the Cree's N-channel 3rd generation SiC MOSFETs (C3M0040120K) with Cree's gate driver CGD15SG00D2SiC in simple hardware circuits to observe their basic behavior. The results are shown using oscilloscope graphs against different voltages and currents. The whole dissertation is about the SiC switches, their working, specifications, usage, CSIs, and a lot more with simulations.