dc.contributor.author | Tamalampudi, Srinivasa Reddy | |
dc.contributor.author | Lu, Jin-You | |
dc.contributor.author | Rajput, Nitul | |
dc.contributor.author | Alfakes, Boulos | |
dc.contributor.author | Sankar, Raman | |
dc.contributor.author | Apostoleris, Harry | |
dc.contributor.author | Patole, Shashikant | |
dc.contributor.author | Almansouri, Ibraheem | |
dc.contributor.author | Chiesa, Matteo | |
dc.date.accessioned | 2022-04-08T08:53:10Z | |
dc.date.available | 2022-04-08T08:53:10Z | |
dc.date.issued | 2020-07-15 | |
dc.description.abstract | Two-dimensional metal dichalcogenide/monochalcogenide thin flakes have attracted much attention owing to their remarkable
electronic and electrochemical properties; however, chemical instability limits their applications. Chemical vapor transport (CVT)-
synthesized SnTiS<sub>3</sub> thin flakes exhibit misfit heterojunction structure and are highly stable in ambient conditions, offering a great
opportunity to exploit the properties of two distinct constituent materials: semiconductor SnS and semi-metal TiS<sub>2</sub>. We
demonstrated that in addition to a metal-like electrical conductivity of 921 S/cm, the SnTiS<sub>3</sub> thin flakes exhibit a strong bandgap
emission at 1.9 eV, owing to the weak van der Waals interaction within the misfit-layer stackings. Our work shows that the misfit
heterojunction structure preserves the electronic properties and lattice vibrations of the individual constituent monolayers and thus
holds the promise to bridge the bandgap and carrier mobility discrepancy between graphene and recently established 2D
transition metal dichalcogenide materials. Moreover, we also present a way to identify the top layer of SnTiS<sub>3</sub> misfit compound
layers and their related work function, which is essential for deployment of van der Waals misfit layers in future optoelectronic
devices. | en_US |
dc.identifier.citation | Tamalampudi, Lu, Rajput, Lai, Alfakes, Sankar, Apostoleris, Patole, Almansouri, Chiesa. Superposition of semiconductor and semi-metal properties of self-assembled 2D SnTiS3 heterostructures. npj 2D Materials and Applications. 2020;4(23) | en_US |
dc.identifier.cristinID | FRIDAID 1900554 | |
dc.identifier.doi | 10.1038/s41699-020-0158-7 | |
dc.identifier.issn | 2397-7132 | |
dc.identifier.uri | https://hdl.handle.net/10037/24729 | |
dc.language.iso | eng | en_US |
dc.publisher | Nature Research | en_US |
dc.relation.journal | npj 2D Materials and Applications | |
dc.rights.accessRights | openAccess | en_US |
dc.rights.holder | Copyright 2020 The Author(s) | en_US |
dc.title | Superposition of semiconductor and semi-metal properties of self-assembled 2D SnTiS3 heterostructures | en_US |
dc.type.version | publishedVersion | en_US |
dc.type | Journal article | en_US |
dc.type | Tidsskriftartikkel | en_US |
dc.type | Peer reviewed | en_US |