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dc.contributor.authorJensen, Mathias Novik
dc.contributor.authorGates, James C.
dc.contributor.authorFlint, Alex I.
dc.contributor.authorHellesø, Olav Gaute
dc.date.accessioned2023-11-14T08:28:39Z
dc.date.available2023-11-14T08:28:39Z
dc.date.issued2023-09-06
dc.description.abstractRaman spectroscopy can give a chemical ’fingerprint’ from both inorganic and organic samples, and has become a viable method of measuring the chemical composition of single biological particles. In parallel, integration of waveguides and microfluidics allows for the creation of miniaturized optical sensors in lab-on-a-chip devices. The prospect of combining integrated optics and Raman spectroscopy for Raman-on-chip offers new opportunities for optical sensing. A major limitation for this is the Raman background of the waveguide. This background is very low for optical fibers but remains a challenge for planar waveguides. In this work, we demonstrate that UV-written SiO<sub>2</sub> waveguides, designed to mimic the performance of optical fibers, offer a significantly lower background than competing waveguide materials such as Si<sub>3</sub>N<sub>4</sub>. The Raman scattering in the waveguides is measured in absolute units and compared to that of optical fibers and Si<sub>3</sub>N<sub>4</sub> waveguides. A limited study of the sensitivity of the Raman scattering to changes in pump wavelength and in waveguide design is also conducted. It is revealed that UV-written SiO<sub>2</sub> waveguides offer a Raman background lower than −107.4 dB relative to a 785 nm pump and −106.5 dB relative to a 660 nm pump. Furthermore, the UV-written SiO<sub>2</sub> waveguide demonstrates a 15 dB lower Raman background than a Si<sub>3</sub>N<sub>4</sub> waveguide and is only 8.7 − 10.3 dB higher than optical fibers. Comparison with a polystyrene bead (in free space, diameter 7 µm) reveal an achievable peak SNR of 10.4 dB, showing the potential of UV-SiO<sub>2</sub> as a platform for a Raman-on-chip device capable of measuring single particles.en_US
dc.identifier.citationJensen, Gates, Flint, Hellesø. Demonstrating low Raman background in UV-written SiO<sub>2</sub> waveguides. Optics Express. 2023;31(19):31092-31107en_US
dc.identifier.cristinIDFRIDAID 2189250
dc.identifier.doi10.1364/OE.498795
dc.identifier.issn1094-4087
dc.identifier.urihttps://hdl.handle.net/10037/31746
dc.language.isoengen_US
dc.publisherOptica Publishing Groupen_US
dc.relation.ispartofJensen, M.N. (2023). Raman-spectroscopy of extracellular vesicles and self-supervised deep learning. (Doctoral thesis). <a href=https://hdl.handle.net/10037/31854>https://hdl.handle.net/10037/31854</a>.
dc.relation.journalOptics Express
dc.rights.accessRightsopenAccessen_US
dc.rights.holderCopyright 2023 Optica Publishing Groupen_US
dc.rights.urihttps://creativecommons.org/licenses/by/4.0en_US
dc.rightsAttribution 4.0 International (CC BY 4.0)en_US
dc.titleDemonstrating low Raman background in UV-written SiO2 waveguidesen_US
dc.type.versionpublishedVersionen_US
dc.typeJournal articleen_US
dc.typeTidsskriftartikkelen_US
dc.typePeer revieweden_US


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Attribution 4.0 International (CC BY 4.0)
Except where otherwise noted, this item's license is described as Attribution 4.0 International (CC BY 4.0)