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Thickness-Dependent Resonant Raman and E' Photoluminescence Spectra of Indium Selenide and Indium Selenide/Graphene Heterostructures

Permanent lenke
https://hdl.handle.net/10037/17440
DOI
https://doi.org/10.1021/acs.jpcc.9b03457
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article.pdf (2.126Mb)
Akseptert manusversjon (PDF)
Dato
2019-05-28
Type
Journal article
Tidsskriftartikkel
Peer reviewed

Forfatter
Tamalampudi, Srinivasa Reddy; Sankar, Raman; Apostoleris, Harry; Almahri, Mariam Ali; Alfakes, Boulos; Al-Hagri, Abdulrahman; Li, Ru; Gougam, Adel; Almansouri, Ibraheem; Chiesa, Matteo; Lu, Jin-You
Sammendrag
Atomically thin, two-dimensional (2D) indium selenide (InSe) has attracted considerable attention because of the dependence of its bandgap on sample thickness, making it suitable for small-scale optoelectronic device applications. In this work, by the use of Raman spectroscopy with three different laser wavelengths, including 488, 532, and 633 nm, representing resonant, near-resonant, and conventional nonresonant conditions, a conclusive understanding of the thickness dependence of lattice vibrations and electronic band structure of InSe and InSe/graphene heterostructures is presented. Combining our experimental measurements with first-principles quantum mechanical modeling of the InSe systems, we identified the crystal structure as ε-phase InSe and demonstrated that its measured intensity ratio of Raman peaks in the resonant Raman spectrum evolves with the number of layers. Moreover, graphene coating enhances Raman scattering of few-layered InSe and also makes its photoluminescence stable under higher intensity laser illumination. The optically induced charge transfer between van der Waals graphene/InSe heterostructures is observed under excitation of the E′ transition in InSe, where the observed mechanism may potentially be a route for future integrated electronic and optoelectronic devices.
Beskrivelse
This document is the unedited Author’s version of a Submitted Work that was subsequently accepted for publication in Journal of Physical Chemistry C, copyright © American Chemical Society after peer review. To access the final edited and published work see https://doi.org/10.1021/acs.jpcc.9b03457
Forlag
American Chemical Society
Sitering
Tamalampudi SR, Sankar R, Apostoleris H, Almahri MA, Alfakes B, Al-Hagri A, Li R, Gougam, Almansouri I, Chiesa M, Lu J. Thickness-Dependent Resonant Raman and E' Photoluminescence Spectra of Indium Selenide and Indium Selenide/Graphene Heterostructures. Journal of Physical Chemistry C. 2019;123(24):15345-15353
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  • Artikler, rapporter og annet (fysikk og teknologi) [1057]
Copyright © 2019, American Chemical Society

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