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dc.contributor.authorTamalampudi, Srinivasa Reddy
dc.contributor.authorSankar, Raman
dc.contributor.authorApostoleris, Harry
dc.contributor.authorAlmahri, Mariam Ali
dc.contributor.authorAlfakes, Boulos
dc.contributor.authorAl-Hagri, Abdulrahman
dc.contributor.authorLi, Ru
dc.contributor.authorGougam, Adel
dc.contributor.authorAlmansouri, Ibraheem
dc.contributor.authorChiesa, Matteo
dc.contributor.authorLu, Jin-You
dc.date.accessioned2020-02-21T10:24:44Z
dc.date.available2020-02-21T10:24:44Z
dc.date.embargoEndDate2020-05-28
dc.date.issued2019-05-28
dc.description.abstractAtomically thin, two-dimensional (2D) indium selenide (InSe) has attracted considerable attention because of the dependence of its bandgap on sample thickness, making it suitable for small-scale optoelectronic device applications. In this work, by the use of Raman spectroscopy with three different laser wavelengths, including 488, 532, and 633 nm, representing resonant, near-resonant, and conventional nonresonant conditions, a conclusive understanding of the thickness dependence of lattice vibrations and electronic band structure of InSe and InSe/graphene heterostructures is presented. Combining our experimental measurements with first-principles quantum mechanical modeling of the InSe systems, we identified the crystal structure as <i>ε</i>-phase InSe and demonstrated that its measured intensity ratio of Raman peaks in the resonant Raman spectrum evolves with the number of layers. Moreover, graphene coating enhances Raman scattering of few-layered InSe and also makes its photoluminescence stable under higher intensity laser illumination. The optically induced charge transfer between van der Waals graphene/InSe heterostructures is observed under excitation of the E′ transition in InSe, where the observed mechanism may potentially be a route for future integrated electronic and optoelectronic devices.en_US
dc.descriptionThis document is the unedited Author’s version of a Submitted Work that was subsequently accepted for publication in Journal of Physical Chemistry C, copyright © American Chemical Society after peer review. To access the final edited and published work see <a href=https://doi.org/10.1021/acs.jpcc.9b03457>https://doi.org/10.1021/acs.jpcc.9b03457</a>en_US
dc.identifier.citationTamalampudi SR, Sankar R, Apostoleris H, Almahri MA, Alfakes B, Al-Hagri A, Li R, Gougam, Almansouri I, Chiesa M, Lu J. Thickness-Dependent Resonant Raman and E' Photoluminescence Spectra of Indium Selenide and Indium Selenide/Graphene Heterostructures. Journal of Physical Chemistry C. 2019;123(24):15345-15353en_US
dc.identifier.cristinIDFRIDAID 1776557
dc.identifier.doi10.1021/acs.jpcc.9b03457
dc.identifier.issn1932-7447
dc.identifier.issn1932-7455
dc.identifier.urihttps://hdl.handle.net/10037/17440
dc.language.isoengen_US
dc.publisherAmerican Chemical Societyen_US
dc.relation.journalJournal of Physical Chemistry C
dc.rights.accessRightsembargoedAccessen_US
dc.rights.holderCopyright © 2019, American Chemical Societyen_US
dc.subjectVDP::Mathematics and natural science: 400en_US
dc.subjectVDP::Matematikk og Naturvitenskap: 400en_US
dc.titleThickness-Dependent Resonant Raman and E' Photoluminescence Spectra of Indium Selenide and Indium Selenide/Graphene Heterostructuresen_US
dc.type.versionacceptedVersionen_US
dc.typeJournal articleen_US
dc.typeTidsskriftartikkelen_US
dc.typePeer revieweden_US


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