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dc.contributor.authorAlfakes, Boulos
dc.contributor.authorGarlisi, Corrado
dc.contributor.authorVillegas, Juan
dc.contributor.authorAl-Hagri, Abdulrahman
dc.contributor.authorTamalampudi, Srinivasa Reddy
dc.contributor.authorRajput, Nitul S.
dc.contributor.authorLu, Jin-You
dc.contributor.authorLewin, Erik
dc.contributor.authorSá, Jacinto
dc.contributor.authorAlmansouri, Ibraheem
dc.contributor.authorPalmisano, Giovanni
dc.contributor.authorChiesa, Matteo
dc.date.accessioned2023-09-22T10:54:09Z
dc.date.available2023-09-22T10:54:09Z
dc.date.issued2020-01-08
dc.description.abstractGeneration of hydrogen using photoelectrochemical (PEC) water splitting has attracted researchers for the last two decades. Several materials have been utilized as a photoanode in a water splitting cell, including ZnO due to its abundance, low production cost and suitable electronic structure. Most research attempts focused on doping ZnO to tailor its properties for a specific application. In this work, atomic layer deposition (ALD) was used to precisely dope ZnO with hafnium (Hf) in order to enhance its PEC performance. The resultant doped materials showed a significant improvement in PEC efficiency compared to pristine ZnO, which is linked directly to Hf introduction revealed by detailed optical, structural and electrical analyses. The photocurrent obtained in the best performing Hf-doped sample (0.75 wt% Hf) was roughly threefold higher compared to the undoped ZnO. Electrochemical impedance spectroscopy (EIS) and open-circuit potential-decay (OCPD) measurements confirmed suppression in photocarriers' surface recombination in the doped films, which led to a more efficient PEC water oxidation. The enhanced PEC performance of Hf-doped ZnO and effectiveness of the used metal dopant are credited to the synergistic optimization of chemical composition, which enhanced the electrical, structural including morphological, and optical properties of the final material, making Hf-doping an attractive candidate for novel PEC electrodes.en_US
dc.identifier.citationAlfakes, Garlisi, Villegas, Al-Hagri, Tamalampudi, Rajput, Lu, Lewin, Sá, Almansouri, Palmisano, Chiesa. Enhanced photoelectrochemical performance of atomic layer deposited Hf-doped ZnO. Surface & Coatings Technology. 2020;385:1-9en_US
dc.identifier.cristinIDFRIDAID 1835836
dc.identifier.doi10.1016/j.surfcoat.2020.125352
dc.identifier.issn0257-8972
dc.identifier.issn1879-3347
dc.identifier.urihttps://hdl.handle.net/10037/31169
dc.language.isoengen_US
dc.publisherElsevieren_US
dc.relation.journalSurface & Coatings Technology
dc.rights.accessRightsopenAccessen_US
dc.rights.holderCopyright 2020 The Author(s)en_US
dc.titleEnhanced photoelectrochemical performance of atomic layer deposited Hf-doped ZnOen_US
dc.type.versionacceptedVersionen_US
dc.typeJournal articleen_US
dc.typeTidsskriftartikkelen_US
dc.typePeer revieweden_US


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