English
norskBlar i forfatter Artikler, rapporter og annet (fysikk og teknologi) "Alfakes, Boulos"
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Discerning the Contribution of Morphology and Chemistry in Wettability Studies
(Journal article; Tidsskriftartikkel; Peer reviewed, 2018-07-15)The wetting behavior of homogeneous systems is now well understood at the macroscopic scale. However, this understanding offers little predictive power regarding wettability when mesoscopic chemical and morphological heterogeneities come into play. The fundamental interest in the effect of heterogeneity on wettability is derived from its high technological relevance in several industries, including ... -
Explaining doping in material research (Hf substitution in ZnO films) by directly quantifying the van der Waals force
(Journal article; Tidsskriftartikkel; Peer reviewed, 2020-02-04)Non-monotonic behavior has been observed in the optoelectronic properties of ZnO thin films as doped with Hf (HZO). Here we propose that two competing mechanisms are responsible for such behaviour. Specifically, we propose that provided two crystal orientations dominate film growth, only one of them might be responsible for direct Hf substitution. Nonmonotonic behaviour is expected at once by ... -
Superposition of semiconductor and semi-metal properties of self-assembled 2D SnTiS3 heterostructures
(Journal article; Tidsskriftartikkel; Peer reviewed, 2020-07-15)Two-dimensional metal dichalcogenide/monochalcogenide thin flakes have attracted much attention owing to their remarkable electronic and electrochemical properties; however, chemical instability limits their applications. Chemical vapor transport (CVT)- synthesized SnTiS<sub>3</sub> thin flakes exhibit misfit heterojunction structure and are highly stable in ambient conditions, offering a ... -
Thickness-Dependent Resonant Raman and E' Photoluminescence Spectra of Indium Selenide and Indium Selenide/Graphene Heterostructures
(Journal article; Tidsskriftartikkel; Peer reviewed, 2019-05-28)Atomically thin, two-dimensional (2D) indium selenide (InSe) has attracted considerable attention because of the dependence of its bandgap on sample thickness, making it suitable for small-scale optoelectronic device applications. In this work, by the use of Raman spectroscopy with three different laser wavelengths, including 488, 532, and 633 nm, representing resonant, near-resonant, and conventional ...
