• Direct growth of single-layer terminated vertical graphene array on germanium by plasma enhanced chemical vapor deposition 

      Al-Hagri, Abdulrahman; Li, Ru; Rajput, Nitul S; Lu, Jin-You; Cong, Shan; Sloyan, Karen; Almahri, Mariam Ali; Tamalampudi, Srinivasa Reddy; Chiesa, Matteo; Al Ghaferi, Amal (Journal article; Tidsskriftartikkel; Peer reviewed, 2019-08-26)
      Vertically aligned graphene nanosheet arrays (VAGNAs) exhibit large surface area, excellent electron transport properties, outstanding mechanical strength, high chemical stability, and enhanced electrochemical activity, which makes them highly promising for application in supercapacitors, batteries, fuel cell catalysts, etc. It is shown that VAGNAs terminated with a high-quality single-layer graphene ...
    • Direct Measurement of the Magnitude of the van der Waals Interaction of Single and Multilayer Graphene 

      Chiou, Yu-Cheng; Olukan, Tuza Adeyemi; Almahri, Mariam Ali; Apostoleris, Harry; Chiu, Cheng Hsiang; Lai, Chia-Yun; Lu, Jin-You; Santos, Sergio; Almansouri, Ibraheem; Chiesa, Matteo (Journal article; Tidsskriftartikkel; Peer reviewed, 2018-09-23)
      Vertical stacking of monolayers via van der Waals (vdW) assembly is an emerging field that opens promising routes toward engineering physical properties of two-dimensional materials. Industrial exploitation of these engineering heterostructures as robust functional materials still requires bounding their measured properties so as to enhance theoretical tractability and assist in experimental designs. ...
    • Thickness-Dependent Resonant Raman and E' Photoluminescence Spectra of Indium Selenide and Indium Selenide/Graphene Heterostructures 

      Tamalampudi, Srinivasa Reddy; Sankar, Raman; Apostoleris, Harry; Almahri, Mariam Ali; Alfakes, Boulos; Al-Hagri, Abdulrahman; Li, Ru; Gougam, Adel; Almansouri, Ibraheem; Chiesa, Matteo; Lu, Jin-You (Journal article; Tidsskriftartikkel; Peer reviewed, 2019-05-28)
      Atomically thin, two-dimensional (2D) indium selenide (InSe) has attracted considerable attention because of the dependence of its bandgap on sample thickness, making it suitable for small-scale optoelectronic device applications. In this work, by the use of Raman spectroscopy with three different laser wavelengths, including 488, 532, and 633 nm, representing resonant, near-resonant, and conventional ...